Saturated Output Power in Standard Digital 65nm CMOS Using Dummy-Prefilled Microstrip Lines
نویسندگان
چکیده
This paper presents the first 150GHz amplifier in a digital 65nm CMOS technology. Design techniques to preserve raw transistor gain near fmax include layout optimization, dummy-prefilled microstrip lines (MSL) for design-rule compliance, and matching topologies which minimize passive element losses. To the authors’ knowledge, the measured 8.3dB gain, 6.3dBm saturated output power (Psat), 1.5dBm P1dB, 25.5mW DC dissipation (PDC), and 27GHz 3dB BW are among the best in either CMOS or SiGe beyond 110GHz.
منابع مشابه
A 150 GHz Amplifier With 8 dB Gain and 6 dBm in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines
A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and radial stubs for ac ground. Dummy-prefilled microstrip lines, with explicit yet efficient dummy modeling, are used as a compact, density-rule compliant matching element. Transistor layout with parallel gate feed yiel...
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